Transactions on Electrical and Electronic Materials

  • 제11권2호
  • /
  • Pages.73-76
  • /
  • 2010
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

A Study of the Properties of CuInS2 Thin Film by Sulfurization

  • Yang, Hyeon-Hun (Department of Electrical Engineering, Mokpo National University) ;
  • Park, Gye-Choon (Department of Electrical Engineering, Mokpo National University)
  • 발행 : 2010.04.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

키워드

참고문헌

  1. G. C. Park, H. D. Chung, C. D. Kim, H. R. Park, W. J. Jeong, J. U. Kim, H. B. Gu, and K. S. Lee, Sol. Energy Mater. Sol. Cells 49, 365 (1997) [DOI: 10.1016/S0927-0248(97)00087-1].
  2. A. Mere, O. Kijatkina, H. Rebane, J. Krustok, and M. Krunks, J. Phys. Chem. Solids 64, 2025 (2003) [DOI: 10.1016/S0022-3697(03)00124-0].
  3. J. J. M. Binsma, L. J. Giling, and J. Bloem, J. Lumin. 27, 35 (1982) [DOI: 10.1016/0022-2313(82)90028-X].
  4. K. Topper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. Braunig, Appl. Phys. Lett., 71, 482 (1997) [DOI:10.1063/1.119585].
  5. A. Joswig, M. Gossla, H. Metzner, U. Reislohner, Th. Hahn, and W. Witthuhn, Thin Solid Films 515, 5921 (2007) [DOI: 10.1016/j.tsf.2006.12.053].
  6. A. G. Shell, Energie im21. Jahrhundert(in German), (Aktuelle Wirtschaftsanalysen, Heft 25, Hamburg, 1995), p. 5.
  7. R. W. Birkmire, Sol. Energy Mater. Sol. Cells 65, 17 (2001) [DOI:10.1016/S0927-0248(00)00073-8].
  8. M. A. Contreras, B. Egaas, K. Ramanathan, J. Hiltner, A. Swartzlander, F. Hasoon, and R. Noufi, Progr. Photovolt. Res. Appl. 7, 311 (2001) [DOI: 10.1002/(SICI)1099-159X(199907/08)7:4<311::AID-PIP274>3.0.CO;2-G].
  9. Y. Shi, Z. Jin, C. Li, H. An, and J. Qiu, App. Surf. Sci. 252, 3737 (2006) [DOI: 10.1016/j.apsusc.2005.05.055].
  10. R. Klenk, P. Dobson, M. Falz, N. Janke, I. Luck, A. Perez-Rodrıguez, R. Scheer, and E. Terzini, Proceedings of the 16th European Photovoltaic Solar Energy Conference (Glasgow, UK 2000 May 1-5, EPVSEC).
  11. K. Siemer, J. Klaer, I. Luck, J. Bruns, R. Klenk, and D. Braunig, Sol. Energy Mater. Sol. Cells 67, 159 (2001) [DOI: 10.1016/S0927-0248(00)00276-2].

피인용 문헌

  1. Cu2ZnSnS4 thin films and nanowires prepared by different single-step electrodeposition method in quaternary electrolyte vol.65, pp.15-16, 2011, https://doi.org/10.1016/j.matlet.2011.05.003
  2. Laser stimulated changes of the effective energy gap in chalcogenide CuInS2 photovoltaic films vol.38, 2015, https://doi.org/10.1016/j.mssp.2015.03.046
  3. Synthesis and optical properties of CuInS2 thin films prepared by sulfurization of electrodeposited Cu-In layers vol.47, pp.9, 2012, https://doi.org/10.1002/crat.201100559
  4. Synthesis of CuInSe 2 nanoparticles in an oleic acid solution for application in thin film solar cells vol.21, 2015, https://doi.org/10.1016/j.jiec.2014.04.008
  5. Study of quasi-amorphous to nanocrystalline phase transition in thermally evaporated CuInS2 thin films vol.29, pp.04, 2014, https://doi.org/10.1557/jmr.2014.17
  6. absorber layers grown by spin coating method on different kinds of substrates vol.5, pp.3, 2018, https://doi.org/10.1088/2053-1591/aab2d4