Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition

  • Luo, Hongmei (Department of Chemical Engineering, New Mexico State University) ;
  • Wang, Haiyan (Department of Electrical and Computer Engineering, Texas A&M University, College Station) ;
  • Zou, Guifu (Materials Physics and Applications Division, Los Alamos National Laboratory) ;
  • Bauer, Eve (Materials Physics and Applications Division, Los Alamos National Laboratory) ;
  • Mccleskey, Thomas M. (Materials Physics and Applications Division, Los Alamos National Laboratory) ;
  • Burrell, Anthony K. (Materials Physics and Applications Division, Los Alamos National Laboratory) ;
  • Jia, Quanxi (Materials Physics and Applications Division, Los Alamos National Laboratory)
  • Published : 2010.04.25
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Abstract

Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.

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References

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