DOI QR코드

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Non-Quasi-Static RF Model for SOI FinFET and Its Verification

  • Kang, In-Man (School of Electronics Engineering, Kyungpook National University)
  • 투고 : 2010.04.13
  • 발행 : 2010.06.30

초록

The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3 %.

키워드

참고문헌

  1. A. A. Breed and K. P. Roenker, “A small-signal, RF simulation study of multiple-gate and silicon-on insulator MOSFET devices,” 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, September 2004, pp.294-297.
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  5. I. M. Kang and H. Shin, “Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs,” IEEE Transaction on Nanotechnology, May, 2006, Vol.5, No.3, pp.205-210. https://doi.org/10.1109/TNANO.2006.869946
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피인용 문헌

  1. Accurate modeling of nanoscale gate underlap SOI MOSFET and design of low noise amplifier for RF applications vol.56, pp.6, 2013, https://doi.org/10.3103/S0735272713060010
  2. Accurate Non-Quasi-Static Gate-Source Impedance Model of RF MOSFETs vol.13, pp.6, 2013, https://doi.org/10.5573/JSTS.2013.13.6.569