Transactions on Electrical and Electronic Materials

  • 제11권1호
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  • Pages.37-41
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  • 2010
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Mg Delta-Doping Effect on a Deep Hole Center Related to Electrical Activation of a p-Type GaN Thin Film

  • Park, Hyo-Yeol (Department of Semiconductor Applications, Ulsan College) ;
  • Jeon, Kyoung-Nam (Division of R&D, Kodenshi Korea Corporation) ;
  • Kim, Keun-Joo (Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University)
  • 발행 : 2010.02.28
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초록

The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.

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  2. Defect dipoles and electrical properties of magnesium B-site substituted sodium potassium niobates vol.609, 2014, https://doi.org/10.1016/j.jallcom.2014.04.024
  3. Carrier Transport Mechanism at the Interface between Metals and p-Type III–Nitrides Having Different Surface Electronic Structures vol.51, pp.9S2, 2012, https://doi.org/10.7567/JJAP.51.09MK02