Transactions on Electrical and Electronic Materials

  • 제11권5호
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  • Pages.212-215
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  • 2010
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Structural and Dielectric Properties of Sol-gel Derived BiFeO3/Pb(Zr,T)O3 Heterolayered Thin Films

  • Nam, Sung-Pill (Department of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University) ;
  • Lee, Sung-Gap (Department of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University) ;
  • Lee, Young-Hie (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2010.07.01
  • 심사 : 2010.09.07
  • 발행 : 2010.10.31
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초록

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.

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피인용 문헌

  1. Structural and Electrical Properties of Sol-gel Derived BFO/PZT Thin Films with Variation of Solvents vol.24, pp.11, 2011, https://doi.org/10.4313/JKEM.2011.24.11.895