Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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Synthesis of Mn-doped Zn2SiO4 phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics

상대적으로 낮은 온도에서의 고상법에 의한 망간이 도핑된 Zn2SiO4 형광체 입자의 제조 및 형광특성

  • Lee, Jin-Hwa (Department of Industrial Chemical Engineering, College of Engineering, Chungbuk National University) ;
  • Choi, Seung-Ok (Dong Yang Oil & Fat Co., Ltd.) ;
  • Lee, Dong-Kyu (Department of Industrial Chemical Engineering, College of Engineering, Chungbuk National University)
  • 이진화 (충북대학교 공과대학 공업화학과) ;
  • 최성옥 ((주)동양유지) ;
  • 이동규 (충북대학교 공과대학 공업화학과)
  • Published : 2010.01.31
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Abstract

Mn-doped $Zn_2SiO_4$ phosphor particles having submicrometer sizes were synthesized by a solid-state reaction method using methyl hydrogen polysiloxane-treated ZnO, fumed $SiO_2$ and various Mn sources. The crystallization and photoluminescent properties of the phosphor particles were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), and by their photoluminescence(PL) spectra. Due to the effect of the dispersion and coherence of the methyl hydrogen polysiloxane-treated ZnO, the Mn-doped $Zn_2SiO_4$ particles were successfully obtained by a solid state method at $1000^{\circ}C$, and the maximum PL intensity of the prepared particles under vacuum ultra violet(VUV) excitation occurred at a Mn concentration of 0.02mol and a sintering temperature of $1000^{\circ}C$.

Methyl hydrogen polysiloxne으로 처리한 ZnO, fumed $SiO_2$와 다양한 망간 전구체를 이용하여 서브마이크로미터 크기를 갖는 망간이 도핑된 $Zn_2SiO_4$ 형광체 입자를 고상법으로 제조하였다. 결정화와 광발광 특성은 XRD, SEM, PL스펙트라를 이용하여 분석하였다. 고상법으로 제조한 망간 도핑된 $Zn_2SiO_4$는 methyl hydrogen polysiloxne 처리한 ZnO의 분산과 응집 때문에 $1000^{\circ}C$에서 성공적으로 얻어졌고, 진공자외선 여기하에서 제조된 입자의 최대 PL강도는 0.02mol Mn, $1000^{\circ}C$에서 확인되었다.

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References

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