한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제23권12호
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  • Pages.915-918
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  • 2010
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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HBr/Ar/CHF3 혼합가스를 이용한 ZnO 박막의 유도결합 플라즈마 식각

Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3 Gas Mixtures

  • 김문근 (고려대학교 제어계측공학과) ;
  • 함용현 (고려대학교 제어계측공학과) ;
  • 권광호 (고려대학교 제어계측공학과) ;
  • 이현우 (한서대학교 전자.컴퓨터.통신학부)
  • Kim, Moon-Keun (Department of Control and Instrumentation Engineering, Korea University) ;
  • Ham, Young-Hyun (Department of Control and Instrumentation Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University) ;
  • Lee, Hyun-Woo (Division of Electronic, Computer, and Communication Engineering, Hanseo University)
  • 투고 : 2010.09.10
  • 심사 : 2010.10.28
  • 발행 : 2010.12.01
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초록

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

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참고문헌

  1. T. Minami, H. sato, H. Sonohara, S. takata, T. Miyata, and I. Fukuda, Thin solid Films 253, 14 (1994). https://doi.org/10.1016/0040-6090(94)90286-0
  2. J. T. cheung and S. R Johnson, Aerospace Eng. 14, 7 (1994).
  3. H. Gomez, A. Maldonado, R. Asomoza, E.P. Zironi, J. Caneta-Ortega, and J. Palacios Gomez, Thin Soild Films 293, 117 (1997). https://doi.org/10.1016/S0040-6090(96)09001-3
  4. S. R. Min, H. N. Cho, Y. L. Li, and C. W. Chung, Thin Solid Films 516, 3521 (2008). https://doi.org/10.1016/j.tsf.2007.08.023
  5. Y.-H. Ham, A. M. Efremov, S. J. Yun, J. K. Kim, N. K. Min, and K.-H. Kwon, Thin Solid Films 517, 4242 (2009). https://doi.org/10.1016/j.tsf.2009.02.008
  6. M. S. Kim, N.-K. Min, S. J. Yun, H. W. Lee, A. Efremov, and K. -H. Kwon, Microelectron. Eng. 85, 348 (2008). https://doi.org/10.1016/j.mee.2007.07.009
  7. H. K. Kim, J. W. Baea, K. K. Kim, S. J. Park, T. Y. Seong, and I. Adesida, Thin Solid Films 90, 447 (2004).
  8. S. W. Na, M. H. Shin, Y. M. Chung, J. G. Han, and N. E. Lee, J. Vac. Sci. Technol. A 23, 898 (2005). https://doi.org/10.1116/1.1894420