Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3 Gas Mixtures

HBr/Ar/CHF3 혼합가스를 이용한 ZnO 박막의 유도결합 플라즈마 식각

  • Kim, Moon-Keun (Department of Control and Instrumentation Engineering, Korea University) ;
  • Ham, Young-Hyun (Department of Control and Instrumentation Engineering, Korea University) ;
  • Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University) ;
  • Lee, Hyun-Woo (Division of Electronic, Computer, and Communication Engineering, Hanseo University)
  • 김문근 (고려대학교 제어계측공학과) ;
  • 함용현 (고려대학교 제어계측공학과) ;
  • 권광호 (고려대학교 제어계측공학과) ;
  • 이현우 (한서대학교 전자.컴퓨터.통신학부)
  • Received : 2010.09.10
  • Accepted : 2010.10.28
  • Published : 2010.12.01
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Abstract

In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

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References

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