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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth

  • Kwon, Yong-Hwan (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Choe, Joong-Seon (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Sim, Jae-Sik (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Sung-Bock (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Yun, Ho-Gyeong (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Choi, Kwang-Seong (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Choi, Byung-Seok (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Nam, Eun-Soo (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2009.05.15
  • Accepted : 2009.08.26
  • Published : 2009.12.31
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Abstract

In this paper, we present the fabrication of 40 Gb/s traveling-wave electroabsorption modulator-integrated laser (TW-EML) modules. A selective area growth method is first employed in 40 Gb/s EML fabrication to simultaneously provide active layers for lasers and modulators. The 3 dB bandwidth of a TW-EML module is measured to be 34 GHz, which is wider than that of a lumped EML module. The 40 Gb/s non-return-to-zero eye diagram shows clear openings with an average output power of +0.5 dBm.

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References

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