대한금속재료학회지 (Korean Journal of Metals and Materials)

  • 제47권4호
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  • Pages.248-255
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  • 2009
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  • 1738-8228(pISSN)
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  • 2288-8241(eISSN)
대한금속재료학회 (The Korean Institute of Metals and Materials)
권호 표지

n형 Bi-Te 나노와이어와 p형 Sb-Te 나노와이어로 구성된 미세열전소자의 형성공정 및 열전발전특성

Fabrication Process and Power Generation Characteristics of the Micro Thermoelectric Devices Composed of n-type Bi-Te and p-type Sb-Te Nanowires

  • 김민영 (홍익대학교 신소재공학과) ;
  • 박경원 (홍익대학교 신소재공학과) ;
  • 오태성 (홍익대학교 신소재공학과)
  • 투고 : 2008.11.01
  • 발행 : 2009.04.25
⟨ 이전 논문 다음 논문 ⟩

초록

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

키워드

과제정보

연구 과제 주관 기관 : 서울시, 과학기술부

참고문헌

  1. D. M. Rowe, CRC Handbook of Thermoelectrics (CRC Press, Boca Raton, 1995), Sections E & G
  2. M. A. Ryan and J-P. Fleurial, Electochem. Soc. Interface 11, 30 (2002)
  3. B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, B. Yu, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M. S. Dresselhaus, G. Chen, and Z. Ren, Science 320, 634 (2008) https://doi.org/10.1126/science.1156446
  4. C. H. Pai and H. J. Park, J. Kor. Met. & Mater. 46, 315 (2008)
  5. R. Venkatasubramanian, Phys. Rev. B 61, 3091 (2000) https://doi.org/10.1103/PhysRevB.61.3091
  6. X. Sun, Z. Zhang, and M. S. Dresselhaus, Appl. Phys. Lett. 74, 4005 (1999) https://doi.org/10.1063/1.123242
  7. M. S. Dresselhaus, G. Chen, M. Y. Tang, R. Yang, H. Lee, D. Wang, Z. Ren, J-P. Fleurial, and P. Gogna, Adv. Mater. 19, 1 (2007)
  8. B. Yoo, F. Xiao, K.Bozhilov, J. Herman, M. Ryan, and N. Myung, Adv. Mater. 19, 296 (2007) https://doi.org/10.1002/adma.200600606
  9. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn, Nature 413, 597 (2001) https://doi.org/10.1038/35098012
  10. T. C. Harman, P. J. Taylor, M. P. Walsh, and B. E. Laforge, Science 297, 2229 (2002) https://doi.org/10.1126/science.1072886
  11. T. Koga, S. B. Cronin, M. S. Dresselhaus, J. L. Liu, and K. L. Wang, Appl. Phys. Lett. 77, 1490 (2000) https://doi.org/10.1063/1.1308271
  12. O. Yamashita and H. Odahara, J. Mater. Sci. 42, 5867 (2007) https://doi.org/10.1007/s10853-006-1457-x
  13. A. L. Prieto, M. S. Sander, M. S. Martin-Gonzalez, R. Gronsky, T. Sands, and A. M. Stacy, J. Am. Chem. Soc. 123, 7160 (2001) https://doi.org/10.1021/ja015989j
  14. W. Wang, Q. Huang, F. Jia, and J. Zhu, J. Appl. Phys. 96, 615 (2004) https://doi.org/10.1063/1.1736322
  15. J. R. Lim, J. F. Whitacre, J.-P. Fleurial, C.-K. Huang, M. A. Ryan, and N. S. Myung, Adv. Mater. 17, 1488 (2005) https://doi.org/10.1002/adma.200401189
  16. P. Heo, K. Hagiwara, R. Ichino, and M. Okido, J. Electrochem. Soc. 154, C213 (2006) https://doi.org/10.1149/1.2168378
  17. W. M. Yim and F. D. Rosi, J. Solid-State Electronics 15, 1121 (1972) https://doi.org/10.1016/0038-1101(72)90172-4
  18. K. Y. Lee, D. B. Hyun, and T. S. Oh, J. Korean Metall. Mater. 40, 333 (2002)
  19. T. S. Oh, D. B. Hyun, and N. V. Kolomoets, Scripta Mater. 42, 849 (2000) https://doi.org/10.1016/S1359-6462(00)00302-X
  20. G. Leimkuhler, I. Kerkamm, and R. Reineke-Koch, J. Electrochem. Soc. 149, C474 (2002) https://doi.org/10.1149/1.1503811
  21. K. Uemura and I. Nishida, Thermoelectric Semiconductors and Their Applications, Nikkan-Kogyo Shinbun Press, Tokyo (1988) p.2
  22. A. Giani, A. Boulouz, F. Pascal-Delannoy, A. Foucaran, A. Boyer, B. Aboulfarah, and A. Mzerd, J. Mater. Sci. Lett. 18, 541 (1999) https://doi.org/10.1023/A:1006670327086
  23. Y. Kim, A. DiVenere, G. K. L. Wong, J. B. Ketterson, S. Cho, and J. R. Meyer, J. Appl. Phys. 91, 715 (2002) https://doi.org/10.1063/1.1424056