마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)

  • 제16권3호
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  • Pages.31-37
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  • 2009
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  • 1226-9360(pISSN)
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  • 2287-7525(eISSN)
한국마이크로전자및패키징학회 (The Korean Microelectronics and Packaging Society)
권호 표지

Cu-Cu 열압착 웨이퍼 접합부의 계면접합강도에 미치는 $N_2+H_2$ 분위기 열처리의 영향

Effect of $N_2+H_2$ Forming Gas Annealing on the Interfacial Bonding Strength of Cu-Cu thermo-compression Bonded Interfaces

  • 장은정 (국립안동대학교 신소재공학부 청정소재기술연구센터) ;
  • 김재원 (국립안동대학교 신소재공학부 청정소재기술연구센터) ;
  • ;
  • ;
  • 현승민 (한국기계연구원 나노융합기계연구본부) ;
  • 이학주 (한국기계연구원 나노융합기계연구본부) ;
  • 박영배 (국립안동대학교 신소재공학부 청정소재기술연구센터)
  • Jang, Eun-Jung (The Center for Green Materials Technology, School of Advanced Materials Engineering, Andong National University) ;
  • Kim, Jae-Won (The Center for Green Materials Technology, School of Advanced Materials Engineering, Andong National University) ;
  • Kim, Bioh (EV Group) ;
  • Matthias, Thorsten (EV Group) ;
  • Hyun, Seung-Min (Nano-Mechanical System Rearch Division, Korea Institute of Machinery & Materials) ;
  • Lee, Hak-Joo (Nano-Mechanical System Rearch Division, Korea Institute of Machinery & Materials) ;
  • Park, Young-Bae (The Center for Green Materials Technology, School of Advanced Materials Engineering, Andong National University)
  • 발행 : 2009.09.30
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초록

3차원 소자 집적을 위한 저온접합 공정 개발을 위해 Cu-Cu 열 압착 접합을 $300^{\circ}C$에서 30분간 실시하고 $N_2+H_2$, $N_2$분위기에서 전 후속 열처리 효과에 따른 정량적인 계면접착에너지를 4점굽힘시험법을 통해 평가하였다. 전 열처리는 100, $200^{\circ}C$의 $N_2+H_2$ 가스 분위기에서 각각 15분간 처리하였고, 계면접착에너지는 2.58, 2.41, 2.79 $J/m^2$로 전 열처리 전 후에 따른 변화가 없었다. 하지만 250, $300^{\circ}C$의 $N_2$ 분위기에서 1시간씩 후속 열처리 결과 2.79, 8.87, 12.17 $J/m^2$으로 Cu 접합부의 계면접착에너지가 3배 이상 향상된 결과를 얻을 수 있었다.

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.

키워드

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