한국재료학회지 (Korean Journal of Materials Research)

  • 제19권10호
  • /
  • Pages.550-554
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  • 2009
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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Physical and Microwave Dielectric Properties of the MgO-SiO2 System

  • Yeon, Deuk-Ho (Department of Materials Science and Engineering, Yonsei University) ;
  • Han, Chan-Su (Department of Materials Science and Engineering, Yonsei University) ;
  • Key, Sung-Hoon (Department of Materials Science and Engineering, Yonsei University) ;
  • Kim, Hyo-Eun (Department of Materials Science and Engineering, Yonsei University) ;
  • Kang, Jong-Yun (Thin Film Materials Research Center, Korea Institute of Science and Technology) ;
  • Cho, Yong-Soo (Department of Materials Science and Engineering, Yonsei University)
  • 발행 : 2009.10.27
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초록

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

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