Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
권호 표지
DOI QR코드

DOI QR Code

Light Extraction Improvement of 400 nm Wavelength GaN-Based Light-Emitting Diode by Textured Structures

거친 표면구조를 이용한 400 nm 파장 GaN계 발광다이오드의 광 추출효율 개선

  • Published : 2009.07.31
Download PDF
⟨ Previous Next ⟩

Abstract

We fabricated the GaNLED emitting 400 nm wavelength and improved the optical extraction efficiency by making surface patterns on n-GaN layer and ITO layer above p-GaN. In addition, the light reflection metal under the n and p pad is made and the light reflection metal is installed on the backside of the chip. The light extraction efficiency is increased by 20 % with texturing n-GaN layer and 18% with texturing ITO layer at 20 mA. Compared to planar-surface LED, the light extraction efficiency for surface texturing both n-GaN and ITO is increased by 32% at 20mA.

400nm 파장을 방출하는 GaN LED를 제조하여, n-GaN층과 p-GaN층의 위에 있는 ITO층 표면에 패턴을 만들어 광 추출 효율을 향상시켰다. 추가적으로, n과 p패드 아래와 칩의 바닥면에 각각 광반사 금속을 설치하였다. 광 추출 효율은 20mA에서 n-GaN의 텍스쳐링에 의해 20% 증가되었고 ITO의 텍스쳐링에 의해 18% 증가되었다. 표면 처리가 않된 LED와 비교해서 n-GaN와 ITO를 함께 표면 텍스쳐링 했을때의 광 추출 효율은 20mA에서 32% 증가되었다.

Keywords

References

  1. C. Y. Kim, S. J. Kim, Y. S. Choi, Y. H. Han, S. J. Yu, and S. K. Kim, Sae Mulli 50, 180, 2005.
  2. J. S. Kim, J. Y. Kang, P. E. Jeon, J. C. Choi, H. L. Park, and T. W. Kim, Jpn. J. Appl. Phys. 43, 989, 2004 https://doi.org/10.1143/JJAP.43.989
  3. H. Luo, J. K. Kim and E. Fred Schubert, J. Cho, C. Sone, and Y. Park, Appl. Phys. Lett. 86, 243505, 2005. https://doi.org/10.1063/1.1949282
  4. R. H. Horng, X. Zheng, C. Y. Hsieh, and D. S. Wuu, Appl. Phys. Lett. 93, 21125 (2008) https://doi.org/10.1063/1.2961008
  5. Y. Narukawa, J. Narita, T. Sakamoto, and K. Deguchi, Jpn. J. Appl. Phys. 45, L1084, 2006. https://doi.org/10.1143/JJAP.45.L1084
  6. Y. H. Han, S. J. Kim, C. Y. Kim, Y. S. Choi, D. J. Oh, S. J. Yu, and S. K. Kim, Sae Mulli 50, 339, 2005.
  7. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, Jpn. J. Appl. Phys. 41, L1431, 2002. https://doi.org/10.1143/JJAP.41.L1431
  8. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, G. Wang. Solid State Electronics 52, 962, 2008. https://doi.org/10.1016/j.sse.2007.12.013
  9. S. M. Pan, R. C. Tu, Y. M. Fan, R. C. Yeh, and J. T. Hsu, IEEE Photon. Technol. Lett. 15, 646, 2003. https://doi.org/10.1109/LPT.2003.810254
  10. D. S. Leem, T. h. Lee, and T. Y. Seong, Solid State Electronics 51, 793, 2007. https://doi.org/10.1016/j.sse.2007.02.038
  11. B. Y. Jang, J. S. Park, and S. J. Yu are submitted.
  12. E. Fred Schubert, Light-Emitting Diodes, Cambridge University Press, 2006.