Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering

  • Liu, Yan-Yan (School of Electrical Electronic and Information Engineering, Wonkwang University, WRISS) ;
  • Jin, Hu-Jie (School of Electrical Electronic and Information Engineering, Wonkwang University, WRISS) ;
  • Park, Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang University, WRISS) ;
  • Hoang, Geun-C. (Department. of Semiconductor and Display, Wonkwang University. WRISS)
  • Published : 2009.06.25
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Abstract

High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

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