Growth and optical characteristics of the non-phosphor white LED by mixed-source HVPE

혼합소스 HVPE에 의한 비형광체 백색 LED의 성장과 광 특성

  • Kim, E.J. (Department of Applied Science, Korea Maritime University) ;
  • Jeon, H.S. (Department of Applied Science, Korea Maritime University) ;
  • Hong, S.H. (Department of Applied Science, Korea Maritime University) ;
  • Han, Y.H. (Department of Applied Science, Korea Maritime University) ;
  • Lee, A.R. (Department of Applied Science, Korea Maritime University) ;
  • Kim, K.H. (Department of Applied Science, Korea Maritime University) ;
  • Ha, H. (Department of Applied Science, Korea Maritime University) ;
  • Yang, M. (Department of Applied Science, Korea Maritime University) ;
  • Ahn, H.S. (Department of Applied Science, Korea Maritime University) ;
  • Hwang, S.L. (Samsung Electronics) ;
  • Cho, C.R. (Department of nanomedical engineering fusion technology, Busan University) ;
  • Kim, S.W. (Department of Physics, Andong National University)
  • 김은주 (한국해양대학교 반도체물리학과) ;
  • 전헌수 (한국해양대학교 반도체물리학과) ;
  • 홍상현 (한국해양대학교 반도체물리학과) ;
  • 한영훈 (한국해양대학교 반도체물리학과) ;
  • 이아름 (한국해양대학교 반도체물리학과) ;
  • 김경화 (한국해양대학교 반도체물리학과) ;
  • 양민 (한국해양대학교 반도체물리학과) ;
  • 하홍주 (한국해양대학교 반도체물리학과) ;
  • 안형수 (한국해양대학교 반도체물리학과) ;
  • 황선령 (삼성전자 주식회사) ;
  • 조채용 (부산대학교 나노융합기술학과) ;
  • 김석환 (안동대학교 물리학과)
  • Published : 2009.04.30

Abstract

In this paper, we report on the growth and optical characteristics of white-LED without fluorescent material. The growth of DH(double heterostructure) with AlGaN active layer was performed on a n-GaN/(0001) $Al_{2}O_{3}$ by the mixed-source HVPE and multi-sliding boat. The CRI(color rendering index) of packaging device charged in the range 72-93 with CIE chromaticity coordinates(x=$0.26{\sim}0.34$, y=$0.31{\sim}0.40$). And CCT(correlated color temperature) values was measured $5126{\sim}10406K$ with increasing injection current. The CIE point of conventional phosphor white LED shifts blue region, but cm point of non-phosphor white LED shifts opposite direction. These results show the mixed-source HVPE can be possible to newly fabricate method of phosphor free white LED with high CRI value.

본 논문에서는 형광체가 없는 백색 LED의 성장과 광학적인 특성을 분석하였다. 혼합소스(miked-source) HVPE(hydride vapor phase epitaxy) 방법과 다중성장보트를 이용하여 MOCVD로 얇게 성장한 n-GaN 위에 활성층을 AlGaN으로 한 이종접합구조(DH; Doublehetero structure)를 성장하고, 패키징 단계를 거쳐 비형광체 단일칩 백색 LED 램프를 제작하였다. 패키징 한 소자를 주입전류 $10{\sim}100mA$로 변화시켜 측정한 결과 색 연색성 값은 72-93, 색좌표의 좌표값은 X값은 $0.26{\sim}0.34$, Y값은 $0.31{\sim}0.40$에서 가지며, 색온도는 $5126{\sim}10406K$ 범위에서 측정되었다. 또한 주입전류 증가 시, 형광체를 사용한 백색 LED는 청색 영역으로 이동하지만, 제작된 백색 LED는 황색영역으로 색좌표가 이동하였다. 이러한 특성을 통하여 고감도의 색 연색성 값을 가지는 비형광체 백색LED의 성장 가능성을 확인하였으며, 광 특성 분석 결과를 통하여 혼합소스의 성장 메커니즘을 제안하고자 한다.

Keywords

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