반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Reactive sputtering 법으로 증착된 AZO 박막의 전기적 및 구조적 특성

Electrical and structural characteristics of AZO thin films deposited by reactive sputtering

  • 허주희 (한국기술교육대학교 신소재공학과) ;
  • 이유림 (한국기술교육대학교 신소재공학과) ;
  • 이규만 (한국기술교육대학교 신소재공학과)
  • Heo, Ju-Hee (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Yu-Lim (Dept. of Materials Engineering, Korea University of Technology and Education) ;
  • Lee, Kyu-Mann (Dept. of Materials Engineering, Korea University of Technology and Education)
  • 발행 : 2009.03.31
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초록

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

키워드

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