References
- SEMATECH, International Technology Roadmap for Semiconductors, San Jose: Semiconductor Industry Association, 2007.
- National Research Council, Database Needs for Modeling and Simulation of Plasma Processing, Washington D.C.: National Academy Press, 1996.
- Chan, J. A., “Response Surface Methodology Improves Batch RIE Processing,” Semiconductor International, Vol. 18, pp. 85-94, 1995.
- National Research Council, Plasma Processing of Materials: Scientific Opportunities and Technological Challenges, Washington D.C.: National Academy Press, 1995.
- Mocella, M. T., “The CFC-Ozone Issue in Dry Etch Process Development,” Solid State Technol., Vol. 19, pp. 102-108, 1991.
- Kim, H. C., and Manousiouthakis, V. I., “Dually Driven Radio Frequency Plasma Simulation with a Three Moment Model,” J. Vac. Sci. Technol. A, Vol. 16, pp. 2162-2172, 1998. https://doi.org/10.1116/1.581324
- Kim, H. C., and Manousiouthakis, V. I., “Simulation Based Plasma Reactor Design for Improved Ion Bombardment Uniformity,” J. Vac. Sci. Technol. B, Vol. 18, pp. 841-847, 2000. https://doi.org/10.1116/1.591284
- Kim, H. C., and Manousiouthakis, V. I., “Dust Transport Phenomena in a Capacitively Coupled Plasma Reactor,” J. Appl. Phys., Vol. 89, pp. 34-41, 2002. https://doi.org/10.1063/1.1285843
- Kim, H. C., and Sul, Y. T., “Development of Virtual Integrated Prototyping Simulation Environment of Plasma Chamber Analysis and Design (VIP-SEPCAD),” J. of the Korean Society of Semiconductor Equipment Technology, Vol. 2, pp. 9-12, 2003.
- Kim, H. C., Sul, Y. T., and Manousiouthakis, V. I., “On Rapid Computation of Time Periodic Steady State in Simulation of Capacitively Coupled RF Plasma,” IEEE Trans. Plasma Sci., Vol. 32, pp.399-404, 2004. https://doi.org/10.1109/TPS.2004.828126
- Kim, H. C., “Effects of Phase Difference between Voltage Waves Applied to Primary and Secondary Electrodes in Dual Frequency Plasma Chamber,” J. of the Semiconductor & Display Equipment Technology, Vol. 4, pp. 11-14, 2005.
- Park, S. K. and Kim, H. C., “Simulation of Capacitively Coupled RF Plasma; Effect of Secondary Electron Emmision – Formation of Electron Shock Wave,” J. of the Semiconductor & Display Equipment Technology, Vol. 8, pp. 31-37, 2009.
- ESI CFD Inc., CFD-ACE+ V2009.0 Users Manual, Huntsville: ESI CFD Inc, 2009.
- An, Y., Lu, Y., Li, D., and Chen, Y., “Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor,” Sci. China Ser. ETech. Sci., Vol. 51, pp. 674-682, 2008. https://doi.org/10.1007/s11431-008-0065-1