대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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S-파라미터 측정을 통한 MOSFET 캐리어 속도의 고온 종속 SPICE 모델링

High Temperature Dependent SPICE Modeling for Carrier Velocity in MOSFETs Using Measured S-Parameters

  • 정대현 (한국외국어대학교 전자정보공학부) ;
  • 고봉혁 (한국외국어대학교 전자정보공학부) ;
  • 이성현 (한국외국어대학교 전자정보공학부)
  • Jung, Dae-Hyoun (School of Electronics and Information Engineering, Hankuk University of Foreign Studies) ;
  • Ko, Bong-Hyuk (School of Electronics and Information Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seong-Hearn (School of Electronics and Information Engineering, Hankuk University of Foreign Studies)
  • 발행 : 2009.12.25
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초록

$0.18{\mu}m$ deep n-well 벌크 NMOSFET에서 측정된 차단주파수 $f_T$의 고온종속성을 모델화하기 위해, 측정된 S-파라미터를 사용한 정확한 RF 방법으로 $30^{\circ}C$에서 $250^{\circ}C$까지 전자속도 고온 데이터가 추출되었다. 이러한 추출데이터를 사용하여 개선된 온도종속 전자속도 방정식이 높은 온도의 범위에서 생기는 기존 방정식의 모델링 오차를 없애기 위해 개발되었으며 BSIM3v3 SPICE RF 모델에 구현되었다. 개선된 온도 종속 방정식은 기존 모델보다 $30^{\circ}C$에서 $250^{\circ}C$까지 측정된 $f_T$와 더 잘 일치하였으며, 이는 개선된 방정식의 정확성을 입증한다.

In order to model the high temperature dependence of the cutoff frequency $f_T$ in $0.18{\mu}m$ deep n-well isolated bulk NMOSFET, high temperature data of electron velocity of bulk MOSFETs from $30^{\circ}C$ to $250^{\circ}C$ are obtained by an accurate RF extraction method using measured S-parameters. From these data, an improved temperature-dependent electron velocity equation is developed and implemented in a BSIM3v3 SPICE model to eliminate modeling error of a conventional one in the high temperature range. Better agreement with measured $f_T$ data from $30^{\circ}C$ to $250^{\circ}C$ are achieved by using the SPICE model with the improved equation rather than the conventional one, verifying its accuracy of the improved one.

키워드

참고문헌

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