전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제58권3호
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  • Pages.544-547
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  • 2009
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

증착온도에 따른 SBN 박막의 미세구조 및 특성

Microstructure and Properties of SBN Thin film with Deposition Temperature

  • 발행 : 2009.03.01
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초록

The $Sr_{0.7}Bi_{2.3}Nb_{2}O_{9}$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition temperature. The optimum conditions of RF power and Ar/$O_2$ ratio were 60[W] and 70/30, respectively. Deposition rate of SBN thin films was about 4.17[nm/min]. The crystallinity of SBN thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}400[^{\circ}C]$, the surface rougness showed about 4.33[nm]. The capacitance of SBN thin films were increased with the increase of deposition temperature.

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