References
- M.A. Khan, G. Simin, S.G. Pytel, A. Monti, E. Santi and J.L. Hidgins. "New Developments in Gallium Nitride and the Impact on Power Electronics", Power Electronics Specialist Conference,pp.15-26, 2005
-
M. Micovic, N.X. Nguyen, P. Janke, W.S. Wong, P. Hashimoto, L.M. McCray and C. Nguyen. "GaN/AlGaN high electron mobility transistors with
$f_T$ of 110 GHz", Electronic Letters, Vol. 36, pp. 358-359, Feb.2000 https://doi.org/10.1049/el:20000296 - N.Q. Zhang, S. Keller, G.S. Parish, S. Heikman, S.P. DenBaars and U.K. Mishra, "High breakdown GaN HEMT with overlapping gate structure", Electron Device Letters IEEE, Vol. 21, No. 9,pp. 21-423, Sept. 2000 https://doi.org/10.1109/55.817440
- M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemolo, T. Tanaka, D. Ueda and T. Egawa, "AIGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure", IEEE Transactions on Electron Devices, Vol. 52, No.9, pp. 1963-1968, Sept. 2005 https://doi.org/10.1109/TED.2005.854265
- L.M. Tolbert et. aI., "Power Electronics For Distributed Energy Systems and Transmission And Distribution Applications", Application Report, Oak Ridge National Laboratory, 2005
- R.J. Trew. "SiC and Gan Transistor - Is There One Winner for Microwave Power Applications?", Proceedings of lEEE. Vol. 90, No.6, pp. 1032-1047, June 2002 https://doi.org/10.1109/JPROC.2002.1021568
- R. Borges, "Gallium nitride electronic devices for high-power wireless applications", Application Notes, RF Semiconductor, 2001
- S.G. Pytel, S. Lentijo, A. Koudymov, S. Rai, H. Fatima, V. Adivarahan, A. Chitnis, J. Yang, J.L. Hudgins, E. Saanti, M. Monti, G. Simin, M.A. Khan, "AIGaN/GaN MOSHFET integrated circuit power converter", Power Electronics Specialists Conference, Vol. 1, pp. 579-584, June 2004
- J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, V. Steel, P. Garber, P. Wilkerson, B. Zaroff, J. Dick, T. Mercier, J. Bonaker, M. Hamilton, C. Greer and M. Isenhour, "Gallium nitride (GaN) HEMT's: progress and potential for commercial applications", Gallium Arsenide Integrated Circuit (GaAslC) Symposium, pp. 243-246, Oct. 2002
- W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, L. Omura and T. Ogura, "High breakdown Voltage undoped AlGaN/GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application", IEEE Transactions on Electron Devices, Vol 51, No. 11, pp. 1913-1917, Nov. 2004 https://doi.org/10.1109/TED.2004.836799
- I. Adesida, V. Kumar, J.W. Lee, A. Kuliev, R. Schwindt and W. Lanford, "GaN electronics with high electron mobility transistors", Microelectronics International Conference, Vol. 1, pp. 89-96, May 2004
- J.M. Redwing, M.A. Tishler, J.S. Flynn, S. Elhamri, M. Ahoujja, R.s. Newrock and W.C. Mitchell, "Two-dimensional electron gas properties of AIGaN/GaN heterostmctires frown on 6H-SiC and sapphire substrates", Appl. Phys. Lett. Vol. 69, No.7, pp. 963-965, Aug. 1996 https://doi.org/10.1063/1.117096
- Y. Zhang et at,. "Charge control and mobility in AIGaN/GaN transistors: Experimental and theoretical studies", J. Appl. Phys, Vol. 87, pp. 7981-7987, June 2000 https://doi.org/10.1063/1.373483
- N. Zhang, V. Mehrotra, S. Chandrasekaran, B. Moran, S.Likun, U. Mishra, E. Etzkorn and D. Clarke, "Large area Gan HEMT power devices for power electronic applications: switching and temperature characteristics", Power Electronics Specialist Conference, Vol. 1, pp. 233-237, June 2003
- J.L. Hudgins, G.s. Simin, E. Santi and M.A. Khan, "A new assessment of wide bandgap semiconductors for power devices" IEEE Transactions on Power Electronics, Vol. 18, No.3, pp. 907-914, May 2003 https://doi.org/10.1109/TPEL.2003.810840
- M.A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska and M.S. Shur, "AIGaN/GaN Metal-Oxide-Semiconductor Hetersostructure Field Effect Transistor", IEEE Electron Device Letter, Vol. 21, No.2, pp. 63-65, Feb. 2000 https://doi.org/10.1109/55.821668
-
G. Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M.A. Khan, R. Gaska and M. Shur, "A 7.5 kW/
$mm^2$ current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates", Electronics Letters, Vol. 36, pp.2043-2044, 2000 https://doi.org/10.1049/el:20001401 - R.J. Trew, "Wide bandgap semiconductor transistors for microwave power amplifiers", IEEE Microwave magazine, Vol. 1, pp. 46-54, March 2000 https://doi.org/10.1109/6668.823827
- B. Ozpineci et aI., "Comparison of Wide Bandgap Semiconductors For Power Applications", EPE, 2003
- S. Boutros, S. Chandrasekaran, W.B. Luo and V. Mehrotra, "GaN Switching Devices for High-Frequency, KW Power Conversion", IEEE International Symposium on Power Semiconductor Devices, pp. 1-4, June 2006
- H. Ueda, M. Sugimoto, T. Uesugi, O. Fujishima and T. Kachi, "High Current Operation of GaN Power HEMTs", Proceeding International Symposium on Power Semiconductor Devices and IC's, pp. 311-314, May 2005