Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications

  • Published : 2009.01.20

Abstract

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

Keywords

References

  1. M.A. Khan, G. Simin, S.G. Pytel, A. Monti, E. Santi and J.L. Hidgins. "New Developments in Gallium Nitride and the Impact on Power Electronics", Power Electronics Specialist Conference,pp.15-26, 2005
  2. M. Micovic, N.X. Nguyen, P. Janke, W.S. Wong, P. Hashimoto, L.M. McCray and C. Nguyen. "GaN/AlGaN high electron mobility transistors with $f_T$ of 110 GHz", Electronic Letters, Vol. 36, pp. 358-359, Feb.2000 https://doi.org/10.1049/el:20000296
  3. N.Q. Zhang, S. Keller, G.S. Parish, S. Heikman, S.P. DenBaars and U.K. Mishra, "High breakdown GaN HEMT with overlapping gate structure", Electron Device Letters IEEE, Vol. 21, No. 9,pp. 21-423, Sept. 2000 https://doi.org/10.1109/55.817440
  4. M. Hikita, M. Yanagihara, K. Nakazawa, H. Ueno, Y. Hirose, T. Ueda, Y. Uemolo, T. Tanaka, D. Ueda and T. Egawa, "AIGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure", IEEE Transactions on Electron Devices, Vol. 52, No.9, pp. 1963-1968, Sept. 2005 https://doi.org/10.1109/TED.2005.854265
  5. L.M. Tolbert et. aI., "Power Electronics For Distributed Energy Systems and Transmission And Distribution Applications", Application Report, Oak Ridge National Laboratory, 2005
  6. R.J. Trew. "SiC and Gan Transistor - Is There One Winner for Microwave Power Applications?", Proceedings of lEEE. Vol. 90, No.6, pp. 1032-1047, June 2002 https://doi.org/10.1109/JPROC.2002.1021568
  7. R. Borges, "Gallium nitride electronic devices for high-power wireless applications", Application Notes, RF Semiconductor, 2001
  8. S.G. Pytel, S. Lentijo, A. Koudymov, S. Rai, H. Fatima, V. Adivarahan, A. Chitnis, J. Yang, J.L. Hudgins, E. Saanti, M. Monti, G. Simin, M.A. Khan, "AIGaN/GaN MOSHFET integrated circuit power converter", Power Electronics Specialists Conference, Vol. 1, pp. 579-584, June 2004
  9. J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, V. Steel, P. Garber, P. Wilkerson, B. Zaroff, J. Dick, T. Mercier, J. Bonaker, M. Hamilton, C. Greer and M. Isenhour, "Gallium nitride (GaN) HEMT's: progress and potential for commercial applications", Gallium Arsenide Integrated Circuit (GaAslC) Symposium, pp. 243-246, Oct. 2002
  10. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, L. Omura and T. Ogura, "High breakdown Voltage undoped AlGaN/GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application", IEEE Transactions on Electron Devices, Vol 51, No. 11, pp. 1913-1917, Nov. 2004 https://doi.org/10.1109/TED.2004.836799
  11. I. Adesida, V. Kumar, J.W. Lee, A. Kuliev, R. Schwindt and W. Lanford, "GaN electronics with high electron mobility transistors", Microelectronics International Conference, Vol. 1, pp. 89-96, May 2004
  12. J.M. Redwing, M.A. Tishler, J.S. Flynn, S. Elhamri, M. Ahoujja, R.s. Newrock and W.C. Mitchell, "Two-dimensional electron gas properties of AIGaN/GaN heterostmctires frown on 6H-SiC and sapphire substrates", Appl. Phys. Lett. Vol. 69, No.7, pp. 963-965, Aug. 1996 https://doi.org/10.1063/1.117096
  13. Y. Zhang et at,. "Charge control and mobility in AIGaN/GaN transistors: Experimental and theoretical studies", J. Appl. Phys, Vol. 87, pp. 7981-7987, June 2000 https://doi.org/10.1063/1.373483
  14. N. Zhang, V. Mehrotra, S. Chandrasekaran, B. Moran, S.Likun, U. Mishra, E. Etzkorn and D. Clarke, "Large area Gan HEMT power devices for power electronic applications: switching and temperature characteristics", Power Electronics Specialist Conference, Vol. 1, pp. 233-237, June 2003
  15. J.L. Hudgins, G.s. Simin, E. Santi and M.A. Khan, "A new assessment of wide bandgap semiconductors for power devices" IEEE Transactions on Power Electronics, Vol. 18, No.3, pp. 907-914, May 2003 https://doi.org/10.1109/TPEL.2003.810840
  16. M.A. Khan, X. Hu, G. Simin, A. Lunev, J. Yang, R. Gaska and M.S. Shur, "AIGaN/GaN Metal-Oxide-Semiconductor Hetersostructure Field Effect Transistor", IEEE Electron Device Letter, Vol. 21, No.2, pp. 63-65, Feb. 2000 https://doi.org/10.1109/55.821668
  17. G. Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M.A. Khan, R. Gaska and M. Shur, "A 7.5 kW/$mm^2$ current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates", Electronics Letters, Vol. 36, pp.2043-2044, 2000 https://doi.org/10.1049/el:20001401
  18. R.J. Trew, "Wide bandgap semiconductor transistors for microwave power amplifiers", IEEE Microwave magazine, Vol. 1, pp. 46-54, March 2000 https://doi.org/10.1109/6668.823827
  19. B. Ozpineci et aI., "Comparison of Wide Bandgap Semiconductors For Power Applications", EPE, 2003
  20. S. Boutros, S. Chandrasekaran, W.B. Luo and V. Mehrotra, "GaN Switching Devices for High-Frequency, KW Power Conversion", IEEE International Symposium on Power Semiconductor Devices, pp. 1-4, June 2006
  21. H. Ueda, M. Sugimoto, T. Uesugi, O. Fujishima and T. Kachi, "High Current Operation of GaN Power HEMTs", Proceeding International Symposium on Power Semiconductor Devices and IC's, pp. 311-314, May 2005