전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제58권12호
  • /
  • Pages.2420-2424
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  • 2009
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

비휘발성 메모리 응용을 위한 ALD법을 이용한 $Al_2O_3$ 절연막의 특성

Properties of $Al_2O_3$ Insulating Film Using the ALD Method for Nonvolatile Memory Application

  • 정순원 (ETRI 융합부품.소재연구부문) ;
  • 이기식 (단국대학교 전자.전기공학부) ;
  • 구경완 (호서대학교 국방과학기술학과)
  • 발행 : 2009.12.01
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초록

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

키워드

참고문헌

  1. C. A. Nguyen, P. S. Lee, N. Ng, H. Su, S. G. Mhaisalkar, J. Ma, F. Y. C. Boey, 'Anomalous polarization switching in organic ferroelectric field effect transistors', Appl. Phys. Lett., Vol. 91, p. 042909, 2007 https://doi.org/10.1063/1.2757092
  2. C. A. Nguyen, P. S. Lee, S. G. Mhaisalkar, 'Investigation of tum-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric', Org. Electron., Vol. 8, pp. 415-422, 2007 https://doi.org/10.1016/j.orgel.2007.01.010
  3. K. Noda, K. Ishida, A. Kubono, T. Horiuchi, H. Yamada, and K. Matsushige, 'Remanent polarization of evaporated films of vinylidene fluoride oligomers', J. Appl. Phys., Vol. 93, pp. 2866-2870, 2003 https://doi.org/10.1063/1.1540231
  4. C. W. Choi, A. A. Prabu, Y. M. Kim, S. Yoon, K. J Kim, C. Park, 'Comparative electrical bistable characteristics of ferroelectric poly( vinylidene fluoride-trifluoroethylene) copolymer based nonvolatile memory device architectures', Appl. Phys. Lett., Vol. 93, p. 182902, 2008 https://doi.org/10.1063/1.3013835
  5. S. H. Noh, W. Choi, M. S. Oh, D. K. Hwang, K. Lee, S. Im, S. lang, E. Kim, 'ZnO-based nonvolatile memory thin-film transistors with polymer dielectric/ferroelectric double gate insulators', Appl. Phys. Lett., Vol. 90, p.253504, 2007 https://doi.org/10.1063/1.2749841
  6. W. Choi, S. H. Noh, D. K. Hwang, J.-M. Choi, S. Jang, E. Kim, S. Im, 'Pentacene-Based Low-Leakage Memory Transistor with Dielectric/Electrolytic/Dielectric Polymer Layers', Electrochem. Solid-State Lett., Vol. 11, pp. H47-H50, 2008 https://doi.org/10.1149/1.2822888
  7. S. H. Lim, A. C. Rastogi, S. B. Desu, 'Electrical properties of metal-ferroelectric-insulatorsemiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application', J. Appl. Phys., Vol. 96, pp. 5673-5682, 2004 https://doi.org/10.1063/1.1785836
  8. T. J. Reece, S. Ducharme, A. V. Sorokin, M. Poulsen, 'Nonvolatile memory element based on a ferroelectric polymer Langmuir-Blodgett film', Appl. Phys. Lett., Vol. 82, p. 142, 2003 https://doi.org/10.1063/1.1533844
  9. S. Fujisaki, H. Ishiwara, Y. Fujisaki, 'Low-voltage operation of ferroelectric poly(vinylidene fluoridetrifluoroethylene) copolymer capacitors and metal-ferroelectric -insulator-semiconductor diodes', Appl. Phys. Lett., Vol. 90, p. 162902, 2007 https://doi.org/10.1063/1.2723678
  10. S.-W. Jung, S.-M. Yoon, S.-Y. Kang, K.-J. Choi, W.-C. Shin, B.-G. Yu, 'Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(vinylidene fluoride-trifluoroethylene) Copolymer and Thin $Al_2O_3$ Insulating Layer', Electrochem. Solid-State Lett., Vol. 12, No.9, pp. H325-H328, 2009 https://doi.org/10.1149/1.3154417
  11. J.-W. Hwang, B.-D. Min, S.-S. Kim, 'Conformal $Al_2O_3$ Nanocoating of Semiconductor Nanowires by Atomic Layer Deposition', KIEE International Transactions on Electrophysics and Applications, Vol. 3C, No.2, pp. 66-69, 2003