Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor

  • Published : 2009.12.31
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Abstract

Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor without any seed layer. The average growth rate of tin oxide film is about 1.2 A/cycle from $50{^{\circ}C}$ to $150{^{\circ}C}$. The rate decreases rapidly at a substrate temperature of $200{^{\circ}C}$. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Due to a thermal annealing effect, the surface roughness and the tin amount in the film composition are slightly increased.

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