ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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InGaAsP/InP Buried-Ridge Waveguide Laser with Improved Lateral Single-Mode Property

  • Oh, Su-Hwan (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Ki-Soo (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kwon, Oh-Kee (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Oh, Kwang-Ryong (Convergence Components & Materials Research Laboratory, ETRI)
  • Received : 2007.02.05
  • Published : 2008.06.30
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Abstract

A novel InGaAsP/InP buried-ridge waveguide laser diode structure is proposed and demonstrated for use as a single-mode laser. The lateral mode of the proposed device can be controlled by adjusting the composition and thickness of the InGaAsP layer grown over the active region. Stable single-mode operation without kinks or beam-steering is achieved successfully with lateral and transverse in the junction plane even for the device with the ridge width of 9 ${\mu}m$ up to an injection current of 500 mA.

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