ETRI Journal
- Volume 30 Issue 3
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- Pages.383-393
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- 2008
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
Model-Based Analysis of the $ZrO_2$ Etching Mechanism in Inductively Coupled $BCl_3$ /Ar and $BCl_3/CHF_3$ /Ar Plasmas
- Kim, Man-Su (Department of Control and Instrumentation Engineering, Korea University) ;
- Min, Nam-Ki (Department of Control and Instrumentation Engineering, Korea University) ;
- Yun, Sun-Jin (Convergence Components & Materials Research Laboratory, ETRI) ;
- Lee, Hyun-Woo (Department of Computer and Applied Physics, Hanseo University) ;
- Efremov, Alexander M. (Department of Electronic Devices & Materials Technology, Ivanovo State University of Chemistry & Technology) ;
- Kwon, Kwang-Ho (Department of Control and Instrumentation Engineering, Korea University)
- Received : 2007.07.16
- Published : 2008.06.30
Abstract
The etching mechanism of
Keywords
- $ZrO_2$;
- etch rate;
- dissociation;
- ionization;
- etch mechanism;
- $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasma modeling