ETRI Journal
- 제30권1호
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- Pages.158-160
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- 2008
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
Highly Linear and Efficient Microwave GaN HEMT Doherty Amplifier for WCDMA
- Lee, Yong-Sub (Department of Electronic and Electrical Engineering, Pohang University of Science and Technology) ;
- Lee, Mun-Woo (Department of Electronic and Electrical Engineering, Pohang University of Science and Technology) ;
- Jeong, Yoon-Ha (Department of Electronic and Electrical Engineering, Pohang University of Science and Technology)
- 투고 : 2007.08.14
- 발행 : 2008.02.28
초록
A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent channel leakage ratio of -43.2 dBc at
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