High resistivity Czochralski-grown silicon single crystals for power devices

  • Lee, Kyoung-Hee (Department of Applied Chemistry, Dongyang Technical College)
  • Published : 2008.08.31

Abstract

Floating zone, neutron transmutation-doped and magnetic Czochralski silicon crystals are being widely used for fabrication power devices. To improve the quality of these devices and to decrease their production cost, it is necessary to use large-diameter wafers with high and uniform resistivity. Recent developments in the crystal growth technology of Czochralski silicon have enable to produce Czochralski silicon wafers with sufficient resistivity and with well-controlled, suitable concentration of oxygen. In addition, using Czoehralski silicon for substrate materials may offer economical benefits, First, Czoehralski silicon wafers might be cheaper than standard floating zone silicon wafers, Second, Czoehralski wafers are available up to diameter of 300 mm. Thus, very large area devices could be manufactured, which would entail significant saving in the costs, In this work, the conventional Czochralski silicon crystals were grown with higher oxygen concentrations using high pure polysilicon crystals. The silicon wafers were annealed by several steps in order to obtain saturated oxygen precipitation. In those wafers high resistivity over $5,000{\Omega}$ cm is kept even after thermal donor formation annealing.

Keywords

References

  1. H.-J. Schulze and B.O. Kolbesen, "Influence of silicon crystal defects and contamination on the electrical behavior of power devices", Solid-State Electronics 42 (1998) 2187 https://doi.org/10.1016/S0038-1101(98)00215-9
  2. J. Harkonen et al., "Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates" Nucl. Instr. and Meth. A 514 (2003) 173 https://doi.org/10.1016/j.nima.2003.08.102
  3. J. Harkonen et al., "Particle detectors made of highresistivity Czochralski silicon", Nucl. Instr. and Meth. A 541 (2005) 202 https://doi.org/10.1016/j.nima.2005.01.057
  4. M. Bruzzi et al., "Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon", Nucl. Instr. and Meth. A 552 (2005) 20 https://doi.org/10.1016/j.nima.2005.06.001
  5. P. Luukka et al., "Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon", Nucl. Instr. and Meth. A 530 (2004) 117 https://doi.org/10.1016/j.nima.2004.05.058
  6. E. Tuominen et al., "Test beam results of a large area strip detector made on high resistivity Czochralski silicon", Nucl. Phys. B 125 (2003) 175 https://doi.org/10.1016/S0920-5632(03)90986-8
  7. F. Shimura, in: Semiconductor Silicon Crystal Technology (Academic Press, London, 1989) p. 379