Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Comparison of the Electrical and Optical Properties in between Transparent ITO and Au Electrodes using Hydrogen-storage Metals as Intermediate Layers

수소저장합금을 이용한 p-GaN ITO 투명전극과 Au 전극과의 특성비교

  • 채승완 (고려대학교 전기전자공학과) ;
  • 김철민 (고려대학교 전기전자공학과) ;
  • 김은홍 (고려대학교 전기전자공학과) ;
  • 이병규 (고려대학교 전기전자공학과) ;
  • 신영철 (고려대학교 전기전자공학과) ;
  • 김태근 (고려대학교 전기전자공학과)
  • Published : 2008.07.01
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Abstract

In this work, the electrical and optical properties of the two different p-type GaN electrode schemes, ZnNi/ITO and ZnNi/Au, were compared each other, and applied to the top-emitting GaN/InGaN light-emitting diodes (LEDs). The ZnNi/ITO electrode showed much higher transmittance (90%) and slightly lower contact resistance $(1.27{\times}10^{-4}{\Omega}cm^2)$ than those (77%, $(2.26{\times}10^{-4}{\Omega}cm^2)$) of the ZnNi/Au at a wavelength of 460 nm. In addition, GaN LEDs having ZnNi/ITO showed accordingly higher light output power and luminous intensity than those having ZnNI/Au did at the current levels up to 1 A.

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References

  1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kazaki, H. Umemoto, M. Sano, and K. Chocho, 'InGaN-based multi-quantum-well-structure laser diodes', Jpn. J. Appl. Phys., Vol. 35, No. 1, p. 1586, 1997
  2. R. V. Ghita, C. Logofatu, C. Negrila, A. S. Manea, M. Cernea, and M. F. Lazarescu, 'Studies of ohmic contact and schottky barriers on Au-Ge/GaAs and an-Ti/GaAs', J. Opto. Adv. Materials, Vol. 7, No. 6, p. 3033, 2005
  3. E.-S. Lee, I.-S. Seo, K.-J. Kim, and C.-R. Lee, 'Fabrication and characteristics of blue LED on GaN/Si (111) epitaxy grown with AlGaN/GaN superlattice interlayer', J. Kor. Phys., Vol. 45, No. 5, p. 1356, 2004
  4. R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, and D. S. Wuu, 'GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography', Appl. Phys. Lett., Vol. 86, No. 22, p. 1101, 2005
  5. H.-W. Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu. 'Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface', IEEE Photonics Tech. Lett., Vol. 17, No. 5, p. 983, 2005 https://doi.org/10.1109/LPT.2005.846741
  6. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kazaki, H. Umemoto, M. Sano, and K. Chocho, 'InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate', Appl. Phys. Lett., Vol. 72, No. 2, p. 11, 1998
  7. C. H., H.-S. Kim, S.-W. Kim, J.-M. Lee, D.-J. Kim, H.-M. Kim, and S.-J. Park, 'Highly transparent Pt ohmic contact to InGaN / GaN blue light - emitting diodes', J. Kor. Vacuum. Sci., Vol. 4, No. 2, p. 47, 2000
  8. K. Orita, Y. Takase, Y. Fukushima, M. Usuda, T. Ueda, S. Takigawa, T. Tanaka, D. Ueda, and T. Egawa. 'High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal', Jpn. J. Appl. Phys., Vol. 43, p. 5809, 2004 https://doi.org/10.1143/JJAP.43.5809
  9. L. Wut, K. Shintakutg, T. Shinjot, and N. Nakayqa, 'Preparation and structural characterization of Co/Au(OOl) superlattices', J. Phys. Condens., Vol. 5, p. 6515, 1993 https://doi.org/10.1088/0953-8984/5/36/006
  10. T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, and L. A. Coldren, 'Indium tin oxide contacts to gallium nitride optoelectronic devices', Appl. Phys. Lett., Vol. 74, No. 26, p. 930, 1999
  11. S. Y. Kim, H. W. Jang, and J. L. Lee, 'Transparent ohmic contacts on p-GaN using an indium tin oxide overlayerr', Phys. Status Solidi C, Vol. 0, No. 1, p. 214, 2002 https://doi.org/10.1002/pssc.200390026
  12. S. W. Chae, K. C. Kim, D. H. Kim, T. G. Kim, S. K. Yoon, B. W. Oh, D. S. Kim, H. K. Kim, and Y. M. Sung, 'Highly transparent and low-resistant ZnNi/indium tin oxide ohmic contact on p-type GaN', Appl. Phys. Lett., Vol. 90, No. 18, p. 1101, 2007