한국재료학회지 (Korean Journal of Materials Research)

  • 제18권8호
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  • Pages.450-453
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  • 2008
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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In 코도핑 된 p-GaN의 광학적 특성

In Co-Doping Effect on the Optical Properties of P-Type GaN Epilayers

  • 안명환 (전남대학교 공학대학 기계.자동차공학부) ;
  • 정호용 (전남대학교 공학대학 생명.화학공학부) ;
  • 정상조 (전북대학교 반도체물성연구소)
  • An, Myung-Hwan (Division of Mechanical & Auto Motive Engineering, Chonnam National University) ;
  • Chung, Ho-Yong (Division of Biotechnology and Chemical Engineering, Chonnam National University) ;
  • Chung, Sang-Jo (Semiconductor Physics Research Center, Chonbuk National University)
  • 발행 : 2008.08.31
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초록

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown in a low-pressure metal organic chemical vapor deposition technique. The effect of In doping on the p-GaN layer was studied through photoluminescence (PL), persistent photoconductivity (PPC), and transmission electron microscopy (TEM) at room temperature. For the In-doped p-GaN layer, the PL intensity increases significantly and the peak position shifts to 3.2 eV from 2.95 eV of conventional p-GaN. Additionally, In doping greatly reduces the PPC, which was very strong in conventional p-GaN. A reduction in the dislocation density is also evidenced upon In doping in p-GaN according to TEM images. The improved optical properties of the In-doped p-GaN layer are attributed to the high crystalline quality and to the active participation of incorporated Mg atoms.

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