Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Single-Electron Devices for Hopfield Neural Network

홉필드 신경회로망을 위한 단일전자 소자

  • Yu, Yun-Seop (Department of Information & Control Engineering and Electronic Technology Institute, Hankyong National University)
  • 유윤섭 (한경대학교 정보제어공학과 및 전자기술종합연구소)
  • Published : 2008.06.25
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Abstract

This paper introduces a new type of Hopfield neural network using newly developed single-electron devices. In the electrical model of the Hopfield neural network, a single-electron synapse, used as a voltage(or current)-variable resistor, and two stages of single-electron inverters, used as a nonlinear activation function, are simulated with a single-electron circuit simulator using Monte-Carlo method to verily their operation.

본 논문은 새롭게 제안된 단일전자 소자(single-electron device) 및 회로를 이용한 새로운 형태의 홉필드 신경회로망(Hopfield neural network)을 소개한다. 홉필드 신경회로망의 전기적 모델 내부에서 가변저항으로 사용되는 단일전자 시냅스(single-electron synapse)와 비선형 활성함수(nonlinear activation function)로 사용되는 두 단의 단일전자 인버터(single-electron inverter)를 몬테-칼로(Monte-Carlo) 방식의 단일전자 회로 시뮬레이터로 동작을 검증한다.

Keywords

References

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