Transactions on Electrical and Electronic Materials

  • 제9권2호
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  • Pages.67-72
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  • 2008
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Realization and Analysis of p-Type ZnO:Al Thin Film by RF Magnetron Sputtering

  • Jin, Hu-Jie (School of Electrical, Electronic and Information Engineering, WRISS, Wonkwang University) ;
  • Jeong, Yun-Hwan (School of Electrical, Electronic and Information Engineering, WRISS, Wonkwang University) ;
  • Park, Choon-Bae (School of Electrical, Electronic and Information Engineering, WRISS, Wonkwang University)
  • 발행 : 2008.04.30
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초록

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

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피인용 문헌

  1. High-conductivity solution-processed ZnO films realized via UV irradiation and hydrogen treatment vol.103, 2016, https://doi.org/10.1016/j.actamat.2015.11.013