반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

DEMS(Diethoxymethylsilane) precursor를 이용한 PECVD 저유전물질 박막증착연구

The study on low dielectric thin film deposition using DEMS precursor by PECVD

  • 강민구 (한국기술교육대학교 정보기술공학부) ;
  • 김대희 (한국기술교육대학교 신소재공학과) ;
  • 김영철 (한국기술교육대학교 신소재공학과) ;
  • 서화일 (한국기술교육대학교 정보기술공학부)
  • Kang, Min-Goo (School of Information Technology Engineering) ;
  • Kim, Dae-Hee (Materials Engineering, Korea University of Technology and Education) ;
  • Kim, Yeong-Cheol (Materials Engineering, Korea University of Technology and Education) ;
  • Seo, Hwa-Il (School of Information Technology Engineering)
  • 발행 : 2008.12.30
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초록

We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate($\AA$/min) of SiOCH film was increased due to the increase of oxygen radical as a function of $O_2$ flow rates. The dielectric constant was decreased from 3.0 to 2.77, as the film was annealed at $450^{\circ}C$ for 30 min. So, it could account that the dielectric constant changes sensitively with $O_2$ flow rates. Also, the leakage current of the annealed film exhibited stable curve than that of asdeposited. These results were caused by the increase of Si-O-Si group and decrease of Si-CH group and OH group within the film by annealing.

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