대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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높은 Q값을 갖는 저전압 능동 CMOS 인덕터

A Low-voltage Active CMOS Inductor with High Quality Factor

  • 유태근 (전북대학교 전자정보공학부) ;
  • 홍석용 (전북대학교 전자정보공학부) ;
  • 정항근 (전북대학교 전자정보공학부)
  • Yu, Tae-Geun (Division of Electronics & Information Engineering, Chonbuk National University) ;
  • Hong, Suk-Yong (Division of Electronics & Information Engineering, Chonbuk National University) ;
  • Jeong, Hang-Geun (Division of Electronics & Information Engineering, Chonbuk National University)
  • 발행 : 2008.02.25
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 Q값(Q-factor)을 증가시킬 수 있는 저전압 능동(active) CMOS 인덕터를 제안하고 설계하였다. Q값을 증가시키기 위한 방법으로 저전압 능동 CMOS 인덕터에 피드백 저항을 삽입하여 등가적인 인덕턴스와 Q값을 증가시켰다. 저전압 능동 CMOS 인덕터는 0.18um 표준 CMOS 공정으로 설계하였으며 모의실험은 애질런트사의 ADS 시뮬레이터를 이용하였다. 모의 실험결과 설계된 피드백 저항을 삽입한 저전압 능동 CMOS 인덕터는 4GHz에서 1.5nH의 인덕턴스와 최대 3000이상의 Q값을 가졌고 소비전력은 5.4mW였다.

A low-voltage active CMOS inductor approach, which can improve the quality-factor(Q), is proposed in this paper. A low-voltage active inductor circuit topology with a feedback resistance is proposed, which can substantially improve its equivalent inductance and quality-factor(Q). This proposed low-voltage active inductor with a feedback resistance was simulated by ADS(Agilent) using 0.18um standard CMOS technology. Simulation showed that the designed active inductor had a maximum quality-factor(Q) of 3000 with a 1.5nH inductance at 4GHz

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참고문헌

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