Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Micro Bubble Effect in the Seed Adhesion on the Crystal Quality of 6H-SiC grown by a Physical Vapor Transport (PVT) Process

종자정 부착 시 생성되는 마이크로 기공이 PVT법에 의하여 성장시킨 6H-SiC 결정질에 미치는 영향

  • 김정곤 (동의대학교 신소재.나노공학과) ;
  • 김정규 (동의대학교 전자세라믹스센터) ;
  • 손창현 (동의대학교 나노공학과) ;
  • 최정우 (동의대학교 나노공학과) ;
  • 황현희 (동의대학교 나노공학과) ;
  • 이원재 (동의대학교 나노공학과) ;
  • 김일수 (동의대학교 나노공학과) ;
  • 신병철 (동의대학교 나노공학과)
  • Published : 2008.03.01
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Abstract

With different seed adhesion methods, we obtained two different aspects with or without micro-bubble in the interface between a seed and a dense graphite seed holder. To improve the quality of SiC wafer, we introduced a sucrose caramelizing step at the seed adhesion using the sucrose, The n-type 2 inch single crystal exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of about $10^{16}/cm^3$ was determined from Hall measurements, As compared to the characteristics of SiC crystal grown with micro-bubble in the interface between the seed and the dense graphite seed holder, the SiC crystal grown without micro-bubble definitely exhibited lower resistivity, lower micropipe density and higher mobility relatively.

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References

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