Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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A highly integrable p-GaN MSM photodetector with GaN n-channel MISFET for UV image sensor system

  • Lee, Heon-Bok (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Hahm, Sung-Ho (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • Published : 2008.09.30
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Abstract

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

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References

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