센서학회지 (Journal of Sensor Science and Technology)

  • 제17권6호
  • /
  • Pages.414-417
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  • 2008
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  • 1225-5475(pISSN)
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  • 2093-7563(eISSN)
한국센서학회 (The Korean Sensors Society)
권호 표지
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고온 화학센서용 다결정 3C-SiC 쇼트키 다이오드 제작과 그 특성

Fabrication and characteristics of polycrystalline 3C-SiCSchottky diodes for high temperature chemical sensors

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 안정학 (울산대학교 전기전자정보시스템공학부)
  • 발행 : 2008.11.30
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초록

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

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참고문헌

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