마이크로전자및패키징학회지 (Journal of the Microelectronics and Packaging Society)
- 제14권3호
- /
- Pages.43-49
- /
- 2007
- /
- 1226-9360(pISSN)
- /
- 2287-7525(eISSN)
Under Bump Metallurgy의 종류와 리플로우 시간에 따른 Sn 솔더 계면반응
Interfacial Reactions of Sn Solder with Variations of Under-Bump-Metallurgy and Reflow Time
- Park, Sun-Hee (Department of Materials Science and Engineering, Hongik University) ;
- Oh, Tae-Sung (Department of Materials Science and Engineering, Hongik University) ;
- Englemann, G. (High Density Interconnect and Wafer Level Packaging, Fraunhofer IZM)
- 발행 : 2007.09.30
초록
웨이퍼 레벨 솔더범핑시 under bump metallurgy (UBM)의 종류와 리플로우 시간에 따른 Sn 솔더범프의 평균 금속간화합물 층의 두께와 UBM의 소모속도를 분석하였다. Cu UBM의 경우에는 리플로우 이전에
Thickness of intermetallic compounds and consumption rates of under bump metallurgies (UBMs) were investigated in wafer-level solder bumping with variations of UBM materials and reflow times. In the case of Cu UBM,