Transactions on Electrical and Electronic Materials

  • 제8권4호
  • /
  • Pages.153-156
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  • 2007
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Structural and Electrical Properties of Bismuth Magnesium Niobate Thin Films deposited at Various Temperatures

  • Park, Jong-Hyun (School of Nano Science and Technology, Chungnam National University) ;
  • Yoon, Soon-Gil (School of Nano Science and Technology, Chungnam National University)
  • 발행 : 2007.08.31
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초록

Structural and electrical properties of the fully crystallized-bismuth magnesium niobate ($Bi_2Mg_{2/3}Nb_{4/3}O_7$, BMN) films with 15 mol% excess bismuth deposited on Pt bottom electrode by pulsed laser deposition are characterized for various deposition temperatures. The BMN films were crystallized with a monoclinic structure from $300^{\circ}C$ and the surface roughness slightly decreases with increasing deposition temperature. The capacitance density of the films increases with increasing deposition temperature and especially, films deposited at $400^{\circ}C$ exhibit a capacitance density of approximately $620nF/cm^2$. The crystallized BMN films with approximately 170 nm thickness exhibit breakdown strength above 600 kV/cm (${\leq}10V$) irrespective of deposition temperature and a leakage current density of approximately $2{\times}10^{-8}A/cm^2$ at 590kV/cm (at 10 V).

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참고문헌

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