The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Development of a MEMS Structure for an Infrared Focal Plane Array

Infrared Focal Plane Array 용 MEMS 구조체 개발

  • Published : 2007.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

A micromachined sensor part for an infrared focal plane array has been designed and fabricated. Amorphous silicon was adapted as a sensing material, and silicon nitride was used as a membrane material. To get a good efficiency of infrared absorption, the sensor was made as a ${\lambda}/4$ cavity structure. All the processes were done in $0.5\;{\mu}m$ iMEMS fab. in the Electronics and Telecommunication Research Institute (ETRI). The processed MEMS sensor structure had a small membrane deflection less than $0.3\;{\mu}m$. This excellent deflection property can be attributed to the rigorous balancing of the stresses of individual layers. The efficiency of infrared absorption was more than 75% in the wavelength range $8\;-\;14\;{\mu}m$.

Keywords

References

  1. D. Murphy et al, 'Expanded applications for high performance VOx microbolometer FPAs,' In Proceedings of SPIE Vol.5783, pp.448-459, 2005 https://doi.org/10.1117/12.609462
  2. J. J. Yon et al, 'First demonstration of 25um pitch uncooled amorphous silicon microbolometer IRFP A at LETI-LIR,' in Proceedingsof SPIE Vol.5783, pp, 432-440, 2005
  3. K. C. Liddard, 'Applicaton of interferometric enhancement to self-absorbing thin film thermal IR detectors,' Infrared Phys., Vol. 34, No. 4, pp.379-387, 1993 https://doi.org/10.1016/0020-0891(93)90070-N
  4. W. Fang and J. A. Wickert, 'Determining mean and gradient residual stresses in thin films using micromachined cantilevers,' J. Micromech. Microeng., Vol. 6, pp.301-309, 1996 https://doi.org/10.1088/0960-1317/6/3/002
  5. W. S. Yang et al, 'Deformation reduction of MEMS infrared sensor by stress balancing of multilayer,' submitted to J. Micromech. Microeng
  6. M. Klanjsek Gunde and M. Macek, 'Infrared optical constants and dielectric response functions of silicon nitride and oxynitride films,' Phys, Stat. Sol. (a), Vol. 183, No. 2, pp.439-449, 2001 https://doi.org/10.1002/1521-396X(200102)183:2<439::AID-PSSA439>3.0.CO;2-B