한국재료학회지 (Korean Journal of Materials Research)

  • 제17권5호
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  • Pages.263-267
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  • 2007
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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산소 플라즈마를 이용하여 원거리 플라즈마 원자층 증착법으로 형성된 하프늄 옥사이드 게이트 절연막의 특성 연구

Characteristics of Hafnium Oxide Gate Dielectrics Deposited by Remote Plasma-enhanced Atomic Layer Deposition using Oxygen Plasma

  • Cho, Seung-Chan (School of Materials Science and Engineering, Pusan National University) ;
  • Jeon, Hyeong-Tag (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Yang-Do (School of Materials Science and Engineering, Pusan National University)
  • 발행 : 2007.05.27
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초록

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

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참고문헌

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