Journal of information and communication convergence engineering

  • 제5권1호
  • /
  • Pages.45-49
  • /
  • 2007
  • /
  • 2234-8255(pISSN)
  • /
  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지

Analysis of Short Channel Effects Using Analytical Transport Model For Double Gate MOSFET

  • Jung, Hak-Kee (School of Electronic and Information Eng., Kunsan National University)
  • 발행 : 2007.03.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The analytical transport model in subthreshold regime for double gate MOSFET has been presented to analyze the short channel effects such as subthreshold swing, threshold voltage roll-off and drain induced barrier lowering. The present approach includes the quantum tunneling of carriers through the source-drain barrier. Poisson equation is used for modeling thermionic emission current, and Wentzel-Kramers-Brillouin approximations are applied for modeling quantum tunneling current. This model has been used to investigate the subthreshold operations of double gate MOSFET having the gate length of the nanometer range with ultra thin gate oxide and channel thickness under sub-20nm. Compared with results of two dimensional numerical simulations, the results in this study show good agreements with those for subthreshold swing and threshold voltage roll-off. Note the short channel effects degrade due to quantum tunneling, especially in the gate length of below 10nm, and DGMOSFETs have to be very strictly designed in the regime of below 10nm gate length since quantum tunneling becomes the main transport mechanism in the subthreshold region.

키워드

참고문헌

  1. T.Schulz, W.Rosner, E.Landgraf, L.Risch and U. Langmann, 'Planar and vertical double gate concepts,' Solid-State Electronics, vol.46, pp.985989, Jul. 2002
  2. H.R.Huff and P.M.Zeitzoff, 'The Ultimate CMOS Device: A 2003 Perspective,' the 2003 Int. Conf. Characterization and Metrology for ULSI-Technology, Mar. 2003, pp.1-17
  3. Q.Chen, B.Agrawal and J.D.Meindl, 'A Comprehensive Analytical Subthreshold Swing(S) Model for Double-Gate MOSFET,' IEEE Trans. Electron Devices, vol.49, pp.1086-l090, Jun. 2002 https://doi.org/10.1109/TED.2002.1003757
  4. M.Stadele, 'Influence of source-drain tunneling on the subthreshold behavior of sub-10nm double-gate MOSFETs,' in ESSDERC Proc. 2002, pp.135-138
  5. D.Munteanu and J.L.Autran, 'Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices,' Solid-State Electronics, vol. 47, pp. 1219-1225, Jul. 2003 https://doi.org/10.1016/S0038-1101(03)00039-X
  6. H. K. Jung and S. Dimitrijev, ' Analysis of Subthreshold Carrier Transport for Ultimate DGMOSFET' ,' IEEE Trans. Electron Devices, vol.53, pp.685-691, April 2006 https://doi.org/10.1109/TED.2006.870282