대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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$LiNbO_3$ 기판의 도메인 반전 특성과 이를 이용한 기능성 광변조기의 제작

Characteristic of $LiNbO_3$ Domain Inversion and Fabrication of Electrooptic Device Application using Domain Reversal

  • 발행 : 2007.03.25
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초록

본 논문에서는 $LiNbO_3$의 선택적 영역을 도메인 반전을 수행하였으며, 이를 대역변조기 및 SSB 광변조기 제작에 응용하였다. 인가전압에 대한 회로적인 응답전류를 분석 및 고려함으로써 도메인 벽의 이동속도를 정확히 제어할 수 있었다. 과도한 도메인의 벽 이동속도에 의한 도메인 반전 형상을 확인하였고, 또한 도메인 벽의 진행방향에 따라 그 속도의 차이가 발생함을 알 수 있었다. 제작된 대역변조기는 30.3 GHz를 중심주파수로 하여 5.1GHz의 3dB 대역폭을 보였고. SSB 광변조기의 변조 스펙트럼으로부터 19dBm의 5.8GHz RF 입력신호에 대해 USB가 LSB에 비해 33dB정도 억제됨을 확인할 수 있었다.

The periodic domain-inversion in the selective areas of $Ti:LiNbO_3$ Mach-Zender waveguides was performed and band-pass modulators and single sideband (SSB) modulators were fabricated by using domain-reversal. The domain wall velocity was precisely controlled by real-time analysis of a poling-induced response current under an applied voltage. The domain wall velocity was significantly affected by the crystal orientation of the domain wall propagation which influenced the final domain geometry. In a certain case, the decomposition of $LiNbO_3$ crystal was observed, for example, under the condition of too fast domain wall propagation. The fabricated band-pass modulator with a periodic domain-inversion structure showed the maximum modulation efficiency at 30.3 GHz with 5.1 GHz 3dB-bandwidth, and SSB modulator was measured to show 33 dB USB suppression over LSB at 5.8 GHz RF.

키워드

참고문헌

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