JSTS:Journal of Semiconductor Technology and Science

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Analytical Noise Parameter Model of Short-Channel RF MOSFETs

  • Jeon, Jong-Wook (School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University)
  • Published : 2007.06.30
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Abstract

In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

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References

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