ETRI Journal
- 제28권6호
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- Pages.787-789
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- 2006
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
Vertically Well-Aligned ZnO Nanowires on c-$Al_2O_3$ and GaN Substrates by Au Catalyst
- Park, Hyun-Kyu (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
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Oh, Myung-Hoon
(School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
- Kim, Sang-Woo (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
- Kim, Gil-Ho (School of Information and Communication Engineering and and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University) ;
- Youn, Doo-Hyeob (IT Convergence & Components Laboratory, ETRI) ;
- Lee, Sun-Young (IT Convergence & Components Laboratory, ETRI) ;
- Kim, Sang-Hyeob (IT Convergence & Components Laboratory, ETRI) ;
- Kim, Ki-Chul (IT Convergence & Components Laboratory, ETRI) ;
- Maeng, Sung-Lyul (IT Convergence & Components Laboratory, ETRI)
- 투고 : 2006.07.24
- 발행 : 2006.12.31
초록
In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-