ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Vertically Well-Aligned ZnO Nanowires on c-$Al_2O_3$ and GaN Substrates by Au Catalyst

  • Park, Hyun-Kyu (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
  • Oh, Myung-Hoon (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
  • Kim, Sang-Woo (School of Advanced Materials and System Engineering, Kumoh National Institute of Technology) ;
  • Kim, Gil-Ho (School of Information and Communication Engineering and and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University) ;
  • Youn, Doo-Hyeob (IT Convergence & Components Laboratory, ETRI) ;
  • Lee, Sun-Young (IT Convergence & Components Laboratory, ETRI) ;
  • Kim, Sang-Hyeob (IT Convergence & Components Laboratory, ETRI) ;
  • Kim, Ki-Chul (IT Convergence & Components Laboratory, ETRI) ;
  • Maeng, Sung-Lyul (IT Convergence & Components Laboratory, ETRI)
  • Received : 2006.07.24
  • Published : 2006.12.31
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Abstract

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

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