Humidity-Sensing Properties of RF Sputtered Vanadium Oxide Thin Films

RF 스퍼터된 바나듐 산화막의 습도 감지 특성

  • 최복길 (공주대 공대 전기전자공학부) ;
  • 최창규 (서울산업대 전기공학과) ;
  • 김성진 (경남대 공대 전자전기공학부)
  • Published : 2006.10.01

Abstract

Vanadium oxide thin films (VOx) have been deposited by RF magnetron sputtering from $V_2O_5$ target under different oxygen partial pressure ratios(0%, 10%) and substrate temperatures$(27^{\circ}C,\;400^{\circ}C)$. Crystallographic structure and morphology of the films are studied by XRD and SEM. Humidity-sensing properties of resistive sensors having interdigitated electrode structure are characterized through electrical conduction measurements. The films deposited at room temperature are amorphous whereas the ones deposited above foot are polycrystalline. The sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide thin films deposited with $0%O_2$ partial pressure at $400^{\circ}C$ exhibit greater sensitivity to humidity change than others.

Keywords

References

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