대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Ag가 도핑된 칼코게나이드 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성

Photodissolution, photodiffusion characteristics and holographic grating formation on Ag-doped $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin film

  • 정홍배 (광운대 공대 전자재료공학과)
  • 발행 : 2006.10.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

키워드

참고문헌

  1. V. K Tikhomirov and S. R. Elliott, 'Vectoral and scalar photoinduced effects in chalcogenide glasses', J. Non-Cryst. Solids, Vol. 669, pp. 198-200, 1996
  2. S. J Jang, C. H. Yeo, J. I. Park, H. Y. Lee and H. B. Chung, 'The photoinduced anisotropy(PA) by Ag polarized-photodoping in amorphous chalcogenide thin films ', J. KIEEME, Vol. 13, No.6, pp. 533-537, 2000
  3. H. Y. Lee, J. Y. Chun, C. H. Yeo, and H. B. Chung, 'Photoinduced dichroism and its low-temperature characteristics in obliquely deposited amorphous As-Ge-Se-S thin films', J. of Vac. Sci. Tech. A. Vol. 18, pp. 485-491, 2000 https://doi.org/10.1116/1.582213
  4. H. Y. Lee, M. S. Kim and H. B. Chung, 'The analysis of Ag doping mechanism by photo-exposure', J. KIEEME, Vol. 8, No.4, pp. 472-477, 1995
  5. C. H. Yeo, S. J. Jang, J. I. Park and H. B. Chung, 'The measurement on diffraction efficiency in polarization holography using amorphous chalcogenide thin films', J. KIEEME, Vol. 12, No. 12, pp. 1192-1197, 1999
  6. M. Yamaguchi and S. Ban, 'Diffusion of Ag associated with photodoping into amorphous chalcogenides', J. Non-Cryst. Solids, Vol. 47, pp. 341-354, 1982 https://doi.org/10.1016/0022-3093(82)90210-1
  7. H. Kokado, et al., 'Discussion on the mechanism of photodoping', J. Non-Cryst. Solids, Vol. 21, pp. 131-139, 1976 https://doi.org/10.1016/0022-3093(76)90112-5
  8. E. Inoue, et al., 'Imaging in ternary chalcogenide sensors by photo and thermal doping', Photogr. Sci. Eng., Vol. 21, pp, 142-145, 1977
  9. H. Fritzsche, 'The origin of photo-induced optical anisotropies in chalcogenide glasses' J. Non-Cryst. Solids, Vol. 164-166, pp. 1169-1172, 1993 https://doi.org/10.1016/0022-3093(93)91207-J
  10. M. Kastner, D. Adler, H. Fritzsche, 'Valence-alternation model for localized gap states in lone-pair semiconductors', Phys. Rev. Lett, Vol. 37, pp. 1504-1296, 1976 https://doi.org/10.1103/PhysRevLett.37.1504
  11. A. V. Kolobov, S. R. Elliott, 'On the mechanism of photodoping in vitreous chalcogenides', Philos. Mag. B, Vol. 61, No.5, pp. 859-865, 1990 https://doi.org/10.1080/13642819008207567
  12. T. Yagi and S. Kurita, 'Photodoping sensitivity of Ag into amorphous $As_2S_3$ films', J. Appl. Phys., Vol. 54, pp. 647-651, 1983 https://doi.org/10.1063/1.332029
  13. K. N. Lee and H. B. Chung, '2-dimensional embossing type hologram fabrication in amorphous As-Ge-Se-S with the selective etching', Trans. KIEE, Vol. 55C, No.7, pp. 354-358, 2006
  14. C. H. Yeo and H. B. Chung, 'The formation of holographic data grating on amorphous chalcogenide Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ thin films with various thickness' Trans. KillE, Vol. 55C, No.8, pp. 387-390, 2006