플래시 메모리를 위한 Not-cold-Page 쓰기지연을 통한 LRU 버퍼교체 정책 개선

Enhancing LRU Buffer Replacement Policy with Delayed Write of Not-cold-dirty-pages for Flash Memory

  • 정호영 (한양대학교 정보통신학과) ;
  • 박성민 (한양대학교 정보통신학과) ;
  • 차재혁 (한양대학교 정보통신공학부) ;
  • 강수용 (한양대학교 컴퓨터교육과)
  • 발행 : 2006.09.01

초록

플래시 메모리는 비휘발성이며 빠른 I/O 처리 속도와 같은 많은 장점들이 있으나, in-placeupdate가 불가능하고 읽기/쓰기/지우기 작업의 속도가 다르다는 단점을 지니고 있다. 버퍼 캐시를 통해 플래시 메모리 기반 저장장치의 성능을 향상시키기 위해서는 수행 속도가 느림은 물론 지우기 작업의 수행 횟수에 직접적인 영향을 끼치는 쓰기 작업의 횟수를 줄이는 알고리즘이 필요하다. 본 논문에서는 기존의 LRU 버퍼교체 정책에 not-cold-dirty-page에 대한 교체를 지연하는 알고리즘을 적용한 새로운 버퍼교체 정책(LRU-Dirty Page Later-Cold Detection, 이하 LRU-DPL-CD)을 제시하고 성능을 분석한다. 트레이스 기반 시뮬레이션 실험에서 LRU-DPL-CD는 버퍼 적중률의 큰 감소 없이 쓰기 작업과 지우기 작업의 횟수를 감소시켰으며, 그 결과 전체 플래시 메모리의 I/O 수행속도가 증가하는 결과를 보였다.

Flash memory has many advantages like non-volatility and fast I/O speed, but it has also disadvantages such as not-in-place-update data and asymmetric read/write/erase speed. For the performance of flash memory storage, it is essential for the buffer replacement algorithms to reduce the number of write operations that also affects the number of erase operations. A new buffer replacement algorithm is proposed in this paper, that delays the writes of not-cold-dirty pages in the buffer cache of flash storage. We show that this algorithm effectively decreases the number of write operations and erase operations without much degradation of hit ratio. As a result overall performance of flash I/O speed is improved.

키워드

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