Ceramist (세라미스트)
- Volume 9 Issue 4
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- Pages.58-71
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- 2006
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- 1226-976X(pISSN)
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- 2586-0631(eISSN)
Review of alternative gate stack technology research during the last decade
- Lee, Byoung-Hun (IBM) ;
- Kirsch, Paul (IBM) ;
- Alshareef, Husam (Texas Instruments) ;
- Majhi, Prashant (Intel) ;
- Choi, Rino (Freescale assignee) ;
- Song, Seung-Chul (Freescale assignee) ;
- Tseng, Hsing Huang (Freescale assignee) ;
- Jammy, Raj (IBM)
- Published : 2006.08.01
Abstract
Scaling of the gate stack has been one of the major contributors to the performance enhancement of CMOSFET devices in past technology generations. The scalability of gate stack has diminished in recent years and alternative gate stack technology such as metal electrode and high-k dielectrics has been intensively studied during the last decade. Tody the performance of high-k dielectrics almost matches that of conventional
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