JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Integratable Micro-Doherty Transmitter

  • Lee, Jae-Ho (Depart. of Electronic Engineering Sogang University) ;
  • Kim, Do-Hyung (Depart. of Electronic Engineering Sogang University) ;
  • Burm, Jin-Wook (Depart. of Electronic Engineering Sogang University) ;
  • Park, Jin-Soo (Comm. & Network Lab. Samsung Advanced Institute of Technology)
  • Published : 2006.12.31
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Abstract

We propose Doherty power amplifier structure which can be integrated in Silicon RF ICs. Doherty power amplifiers are widely used in RF transmitters, because of their high Power Added Efficiency (PAE) and good linearity. In this paper, it is proposed that a method to replace the quarter wavelength coupler with IQ up-conversion mixers to achieve 90 degree phase shift, which allows on-chip Doherty amplifier. This idea is implemented and manufactured in CMOS 5 GHz band direct-conversion RF transmitter. We measured a 3dB improvement output RF power and linearity.

Keywords

References

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