DOI QR코드

DOI QR Code

Determination of the Depletion Depth of the Deep Depletion Charge-Coupled Devices

  • Kim Man-Ho (School of Electrical Engineering, University of Ulsan)
  • 발행 : 2006.06.01

초록

A 3-D numerical simulation of a buried-channel CCD (Charge Coupled Device) with a deep depletion has been performed to investigate its electrical and physical behaviors. Results are presented for a deep depletion CCD (EEV CCD12; JET-X CCD) fabricated on a high-resistivity $(1.5k\Omega-cm)\;65{\mu}m$ thick epi-layer, on a $550{\mu}m$ thick p+ substrate, which is optimized for X-ray detection. Accurate predictions of the Potential minimum and barrier height of a CCD Pixel as a function of mobile electrons are found to give good charge transfer. The depletion depth approximation as a function of gate and substrate bias voltage provided average errors of less than 6%, compared with the results estimated from X-ray detection efficiency measurements. The result obtained from the transient simulation of signal charge movement is also presented based on 3-Dimensional analysis.

키워드

참고문헌

  1. A. Wells and D. H. Lumb, 'Focal plane CCD imaging X-ray spectrometers for two European missions in the 19901s,' Proc.SPIE, 1153 (1989) 372
  2. A. Wells et al, 'The CCD focal plane imaging detector for JET-X instnunent on spectrum R-G,' Proc. SPIE, 1546-57 (1991) 205
  3. G. Prigozhin, N. R. Butler and S. E. Kissel and G. R. Ricker, 'An experimental study of charge diffusion in the undepleted silicon of X-ray CCDs,' lEEE Trans. Electron Devices, vol. 50, (2003) 246 https://doi.org/10.1109/TED.2002.806470
  4. K. J. McCarthy and A. Wells, 'Measurement and simulation of X-ray quantum efficiency and energy resolution of large area CCDs between 0.3 and 1 OkeV,' Proc. SPIE, 1743 (1992) 211
  5. C. Greenough, Three dimensional algorithms for a robust and efficient semiconductor simulator with parameter extraction: The EVEREST final report, Project report, 1992
  6. M. H., Kim, Three-dimensional numerical analysis of astronomical CCD image sensors for X-ray or UV detection, Ph. D. Thesis, University of Leicester, UK, (1995)
  7. M.H. Kim and S.H. Lim, Three dimensional numerical simulation of buried channel MOSFETs, ICEIC 2000 Proceedings of 'The 2000 International Conference on Electronics, Information and Communication', pp. 453-456, August 9-1 1,2000, Shenyang, China
  8. M. H. Kim, 'Three-dimensional characterizing analysis of Astronomic CCDs with a deep depletion,' Proceedings of the Optical Society of Korea Summer Meeting, FD-1115, pp. 228-229, Aug. 2000, Daegu, Korea